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MG50G6ES50 TOSHIBA

MG50G6ES50 TOSHIBA
#MG50G6ES50 Toshiba MG50G6ES50 New Toshiba IGBT-module 1200V/100A/280W, MG50G6ES50 pictures, MG50G6ES50 price, #MG50G6ES50 supplier
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Email: sales@shunlongwei.com

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MG50G6ES50 Features 
· Low VCE(sat) 
· Compact package 
· P.C. board mount 
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier 
· Uninterruptible power supply
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector current Icp:100A
Collector power dissipation Pc:280W
Collector-Emitter voltage VCES:1200V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2/3 *1 N·m

Toshiba Igbt-module 1200V/100A/280W

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