Sign Up

Sign In

Forgot Password

Lost your password? Please enter your email address. You will receive a link and will create a new password via email.

You must login to ask question.

You must login to add post.

Please briefly explain why you feel this answer should be reported.

FF225R12ME4 Infineon

FF225R12ME4 Infineon
#FF225R12ME4 Infineon FF225R12ME4 New Infineon made IGBT Modules FF225R12ME4 IGBT 1200V 225A, FF225R12ME4 pictures, FF225R12ME4 price, #FF225R12ME4 supplier


Product: IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 225 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1050 W
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Technology: Si
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 10
Subcategory: IGBTs
Part # Aliases: SP000405064 FF225R12ME4 BOSA1

Infineon made IGBT Modules FF225R12ME4 IGBT 1200V 225A

Related Posts