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#BSM75GB120DN2 EUPEC BSM75GB120DN2 New 2IGBT: 75A1200V; IGBT Modules 1200V 75A DUAL , BSM75GB120DN2 pictures, BSM75GB120DN2 price, #BSM75GB120DN2 supplier


Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 105 A
Gate-Emitter Leakage Current: 320 nA
Maximum Operating Temperature: + 150 C
Package / Case: Half Bridge1
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Pd – Power Dissipation: 625 W
Factory Pack Quantity: 10

2IGBT: 75A1200V; IGBT Modules 1200V 75A DUAL

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