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BSM50GD120DN2G Infineon

BSM50GD120DN2G Infineon
#BSM50GD120DN2G Infineon BSM50GD120DN2G New 50A/1200V/IGBT/6U; IGBT Modules 1200V 50A 3-PHASE , BSM50GD120DN2G pictures, BSM50GD120DN2G price, #BSM50GD120DN2G supplier
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Email: sales@shunlongwei.com

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Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 78 A
Gate-Emitter Leakage Current: 200 nA
Pd – Power Dissipation: 400 W
Package / Case: EconoPACK 3A
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10

50A/1200V/IGBT/6U; IGBT Modules 1200V 50A 3-PHASE

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