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Datasheets:BLF6G10(LS)-135R SOT502 BPCN Assembly Origin:RF Power Transistors Transfer PCN Packaging:Date Code Extended Standard Package:20 Category:Discrete Semiconductor Products Family:RF FETsSeries:-Packaging:TrayTransistor Type:LDMOSFrequency:871.5MHz ~ 891.5MHzGain:21dB Voltage – Test:28 VCurrent Rating:32A Noise Figure:-Current – Test:950mA Power – Output:26.5W Voltage – Rated:65V Package / Case:SOT-502BSupplier Device Package:SOT 502B Dynamic Catalog:RF HEMT HFET LDMOS FETsOther #BLF6G10LS-135R NXP BLF6G10LS-135R New RF MOSFET Transistors LDMOS TNS , BLF6G10LS-135R pictures, BLF6G10LS-135R price, #BLF6G10LS-135R supplier


Product Category: RF MOSFET Transistors BLF6G10LS-135R
Manufacturer: NXP
RoHS: RoHS Compliant YES
Transistor Polarity: N-Channel
Id – Continuous Drain Current: 32 A
Vds – Drain-Source Breakdown Voltage: 65 V
Rds On – Drain-Source Resistance: 100 mOhms
Technology: Si
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT502B
Packaging: Tube
Brand: NXP Semiconductors
Channel Mode: Enhancement
Configuration: Single
Height: 4.72 mm
Length: 20.7 mm
Minimum Operating Temperature: – 65 C
Factory Pack Quantity: 20
Type: RF Power MOSFET
Vgs – Gate-Source Voltage: 13 V
Width: 9.91 mm
Part # Aliases: BLF6G10LS-135R,112


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